Thin Film Dielectric PECVD
PECVD (Plasma Enhanced Chemically Evaporated Deposition) are useful low temperature dielectrics that offer many applications ability to isolate metal layers
PECVD
PECVD (Plasma Enhanced Chemically Evaporated Deposition) are useful Low Temperature dielectrics that offer many applications ability to isolate metal layers, while maintaining low temperature over a specific metal. PECVD offers flexible single sided depositions over a wide range of materials. Used in Semiconductor, Bio-Medical, MEMS and many more applications.
Low Temperature PECVD SiO2 (Silane Based) (R.I. 1.5 +/-0.3) 380 Degree C
400A-5KA +/-5%
5KA-10KA +/-5%
10KA-20KA +/-5%
Round Substrates
|
50mm |
2 inch |
|
100mm |
4 inch |
|
125mm |
5 inch |
|
150mm |
6 inch |
|
200mm |
8 inch |
Square Substrates
156mm X 156mm & Smaller
Coupons can be run on a carrier wafer
Note:
Noel utilizes a Variable, Dual Frequency Tool: 1250W @>1300 MHZ/750W @100-400 kHz.
All film deposition as measured on a silicon test wafer. Multi-sack depositions are measured on the individual film, utilizing a test wafer,
A uniformity map will be provided for each film.
Noel is responsible for the film deposition, uniformity and thickness. Noel is not responsible for results of multi-stack depositions. R.I. as measured on bare test wafers for 1KA thickness.
Round Substrates
|
50mm |
2 inch |
|
100mm |
4 inch |
|
125mm |
5 inch |
|
150mm |
6 inch |
|
200mm |
8 inch |
Square Substrates
156mm X 156mm & Smaller
Coupons can be run on a carrier wafer
Note:
Noel utilizes a Variable, Dual Frequency Tool: 1250W @>1300 MHZ/750W @100-400 kHz.
All film deposition as measured on a silicon test wafer. Multi-sack depositions are measured on the individual film, utilizing a test wafer,
A uniformity map will be provided for each film.
Noel is responsible for the film deposition, uniformity and thickness. Noel is not responsible for results of multi-stack depositions. R.I. as measured on bare test wafers for 1KA thickness.