Wet Etch
Wet Etch Table
| Etch Chemistry | Films | E/R Per Minute +/-10% | Temperature |
|---|---|---|---|
|
Pre-Mixed BOE 7:1 |
Thermal Oxide |
800A |
22C - 24C |
|
Pre-Mixed BOE 7:1 |
PECVD SiH4 Oxide |
1200A |
22C - 24C |
|
Pre-Mixed BOE 7:1 |
PECVD TEOS |
1500A |
22C - 24C |
|
Pre-Mixed BOE 7:1 |
LPCVD Nitride |
150A |
22C - 24C |
|
Pre-Mixed BOE 10:1 |
Thermal Oxide |
570A |
22C - 24C |
|
Pre-Mixed HF 10:1 |
Thermal Oxide |
330A |
22C - 24C |
|
Pre-Mixed HF 100:1 |
Thermal Oxide |
32A |
22C - 24C |
|
Chromium Etchant |
Chrome |
700A +/-100A |
22C - 24C |
|
Pre-Mixed ITO Etchant |
Indium Tin Oxide |
150A +/-50A |
22C - 24C |
|
Pre-Mixed Polysilicon Etchant |
Polysilicon |
5000A |
22C - 24C |
|
Pre-Mixed Aluminum Etchant |
Aluminum/Aluminum Cu |
Dependent on temperature |
30C - 60C |
|
KOH (32%) |
Polysilicon |
5000A |
80C |
|
KOH (32%) |
Silicon (Bulk)
|
8000A |
80C |
|
TMAH (25%) |
Silicon (Bulk)
|
4000A |
80C |
|
10:1 H2O2/NH4OH |
W/TiW/TiN
|
120A |
22C-24C |